Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

T. Fromherz; P. Kruck; M. Helm; G. Bauer; J. F. Nützel; G. Abstreiter

doi:10.1063/1.115746

Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. F. Nützel, G. Abstreiter

TUM Emeriti of Excellence

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27 Scopus citations

Abstract

We have investigated the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of ps=2.8×1012 cm-2 both transverse magnetic and transverse electric polarized absorptions have been observed, and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly little sensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsivity.

Original language	English
Pages (from-to)	3611-3613
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	25
DOIs	https://doi.org/10.1063/1.115746
State	Published - 1996

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abstract = "We have investigated the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of ps=2.8×1012 cm-2 both transverse magnetic and transverse electric polarized absorptions have been observed, and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly little sensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsivity.",

author = "T. Fromherz and P. Kruck and M. Helm and G. Bauer and N{\"u}tzel, {J. F.} and G. Abstreiter",

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T1 - Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

AU - Fromherz, T.

AU - Kruck, P.

AU - Helm, M.

AU - Bauer, G.

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1996

Y1 - 1996

N2 - We have investigated the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of ps=2.8×1012 cm-2 both transverse magnetic and transverse electric polarized absorptions have been observed, and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly little sensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsivity.

AB - We have investigated the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of ps=2.8×1012 cm-2 both transverse magnetic and transverse electric polarized absorptions have been observed, and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly little sensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsivity.

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U2 - 10.1063/1.115746

DO - 10.1063/1.115746

M3 - Article

AN - SCOPUS:0030168130

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VL - 68

SP - 3611

EP - 3613

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

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