Skip to main navigation
Skip to search
Skip to main content
Technical University of Munich Home
Help & FAQ
English
Deutsch
Home
Profiles
Research units
Projects
Research output
Datasets
Prizes
Activities
Press/Media
Impacts
Search by expertise, name or affiliation
Transmutation doping and lattice defects in degenerate InSb
H. Gerstenberg,
W. Gläser
Department of Physics
Technical University of Munich
Research output
:
Contribution to journal
›
Article
›
peer-review
8
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Transmutation doping and lattice defects in degenerate InSb'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Lattice Defects
100%
InSb
100%
Doping Defects
100%
Transmutation Doping
100%
Single Crystal
50%
Resistivity
50%
Annealing
50%
Subsequent Annealing
50%
Negatively Charged
50%
Nuclear Reactions
50%
Scattering Rate
50%
Thermal Neutron
50%
Neutron Dose
50%
Transport Parameters
50%
Charged Defects
50%
Holding Temperature
50%
Nuclear Irradiation
50%
Haas Effect
50%
Physics
Nuclear Reaction
100%
Thermal Neutron
100%
Single Crystal
100%
Crystal Defect
100%
Material Science
Annealing
100%
Crystal Defect
100%
Electrical Resistivity
50%
Single Crystal
50%
Chemistry
Single Crystalline Solid
100%
Crystal Defect
100%
Nuclear Reaction
100%