Transmutation doping and lattice defects in degenerate InSb

H. Gerstenberg, W. Gläser

Research output: Contribution to journalArticlepeer-review

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Abstract

n‐type InSb single crystals were irradiated with thermal neutrons below T = 6 K. The Shubnikov‐de Haas effect and the resistivity Q(T = 4.6 K) were measured as a function of the neutron dose and the holding temperature of a subsequent annealing program. The results are discussed in terms of the transport scattering rate and the lifetime of the Landau‐levels. They have to be interpreted by means of n‐doping due to nuclear reactions and irradiation induced negatively charged defects. Almost complete annealing of the transport parameters can be achieved by heating the samples to TA = 400 K.

Original languageEnglish
Pages (from-to)241-252
Number of pages12
JournalPhysica Status Solidi (A) Applied Research
Volume118
Issue number1
DOIs
StatePublished - 16 Mar 1990

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