Transmission electron microscopy (TEM) studies of Ge nanocrystals

⁷⁴Ge nanocrystals were formed by ion beam synthesis in SiO ₂. Transmission Electron Microscopy was used to characterize the structure and properties of these Ge nanocrystals before and after liberation from the matrix. The liberation from the SiO₂ matrix was achieved through selective etching in a HF bath. High-resolution micrographs and selective area diffraction confirm that the crystallinity is retained in this process. Transfer of released nanocrystals is achieved through ultrasonic dispersion in methanol and deposition onto lacey carbon films via evaporation of methanol. In an effort to determine the melting point of Ge nanocrystals and observe the growth and evolution of nanocrystals embedded in the amorphous SiO₂ during heat treatment, as-grown nanocrystals were heated in-situ up to 1192°C±60°C in a JEOL 200CX analytical electron microscope. Electron diffraction patterns are recorded using a Charge-Coupled Device. A large melting hysteresis was observed around the melting temperature of bulk Ge.