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Transition matrix element and recombination mechanism of hexagonal sige

  • A. Dijkstra
  • , M. A.J.V. Tilburg
  • , E. M.T. Fadaly
  • , V. T.V. Lange
  • , M. A. Verheijen
  • , J. R. Suckert
  • , C. Rödl
  • , J. Furthmüller
  • , F. Bechstedt
  • , S. Botti
  • , D. Busse
  • , J. J. Finley
  • , E. P.A.M. Bakkers
  • , J. E.M. Haverkort
  • Eindhoven University of Technology
  • Friedrich Schiller University Jena
  • Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2020
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580767
DOIs
StatePublished - 2020
EventCLEO: Applications and Technology, CLEO_AT 2020 - Washington, United States
Duration: 10 May 202015 May 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F181-CLEO-AT 2020
ISSN (Electronic)2162-2701

Conference

ConferenceCLEO: Applications and Technology, CLEO_AT 2020
Country/TerritoryUnited States
CityWashington
Period10/05/2015/05/20

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