Transient variations in emerging SOI technologies: Modeling and impact on analog/mixed-signal circuits

Michael Fulde; Doris Schmitt-Landsiedel; Gerhard Knoblinger

doi:10.1109/iscas.2007.378337

Transient variations in emerging SOI technologies: Modeling and impact on analog/mixed-signal circuits

Michael Fulde, Doris Schmitt-Landsiedel, Gerhard Knoblinger

Medicine and Health

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

This paper presents the impact of transient variations on SOI device and circuit behavior. History effects, self heating and charge trapping are considered in partially and fully depleted SOI devices. Modeling approaches for these effects are shown and, based on measurement, extended to the specific issues of emerging SOI technologies. The scaling behavior of self heating is investigated, revealing an increase of the thermal resistance with technology scaling. A simple equivalent circuit model for the charge trapping effect is proposed and verified with measurement data. Simulations based on these models show how transient variations influence the circuit behavior. As an example a 12bit SAR-AD converter is analyzed. The dynamic V_T shift of the SOI devices degrades the resolution of the converter.

Original language	English
Article number	4252872
Pages (from-to)	1249-1252
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
DOIs	https://doi.org/10.1109/iscas.2007.378337
State	Published - 2007
Event	2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 - New Orleans, LA, United States Duration: 27 May 2007 → 30 May 2007

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title = "Transient variations in emerging SOI technologies: Modeling and impact on analog/mixed-signal circuits",

abstract = "This paper presents the impact of transient variations on SOI device and circuit behavior. History effects, self heating and charge trapping are considered in partially and fully depleted SOI devices. Modeling approaches for these effects are shown and, based on measurement, extended to the specific issues of emerging SOI technologies. The scaling behavior of self heating is investigated, revealing an increase of the thermal resistance with technology scaling. A simple equivalent circuit model for the charge trapping effect is proposed and verified with measurement data. Simulations based on these models show how transient variations influence the circuit behavior. As an example a 12bit SAR-AD converter is analyzed. The dynamic VT shift of the SOI devices degrades the resolution of the converter.",

author = "Michael Fulde and Doris Schmitt-Landsiedel and Gerhard Knoblinger",

year = "2007",

doi = "10.1109/iscas.2007.378337",

language = "English",

pages = "1249--1252",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 ; Conference date: 27-05-2007 Through 30-05-2007",

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T2 - 2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007

AU - Fulde, Michael

AU - Schmitt-Landsiedel, Doris

AU - Knoblinger, Gerhard

PY - 2007

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N2 - This paper presents the impact of transient variations on SOI device and circuit behavior. History effects, self heating and charge trapping are considered in partially and fully depleted SOI devices. Modeling approaches for these effects are shown and, based on measurement, extended to the specific issues of emerging SOI technologies. The scaling behavior of self heating is investigated, revealing an increase of the thermal resistance with technology scaling. A simple equivalent circuit model for the charge trapping effect is proposed and verified with measurement data. Simulations based on these models show how transient variations influence the circuit behavior. As an example a 12bit SAR-AD converter is analyzed. The dynamic VT shift of the SOI devices degrades the resolution of the converter.

AB - This paper presents the impact of transient variations on SOI device and circuit behavior. History effects, self heating and charge trapping are considered in partially and fully depleted SOI devices. Modeling approaches for these effects are shown and, based on measurement, extended to the specific issues of emerging SOI technologies. The scaling behavior of self heating is investigated, revealing an increase of the thermal resistance with technology scaling. A simple equivalent circuit model for the charge trapping effect is proposed and verified with measurement data. Simulations based on these models show how transient variations influence the circuit behavior. As an example a 12bit SAR-AD converter is analyzed. The dynamic VT shift of the SOI devices degrades the resolution of the converter.

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SP - 1249

EP - 1252

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

M1 - 4252872

Y2 - 27 May 2007 through 30 May 2007

ER -

Transient variations in emerging SOI technologies: Modeling and impact on analog/mixed-signal circuits

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