Transient electro-thermal analysis of dynamic punch-through in SiC power devices

W. Kaindl; M. Lades; G. Wachutka

Transient electro-thermal analysis of dynamic punch-through in SiC power devices

W. Kaindl
, M. Lades
, G. Wachutka

Computation, Information and Technology

Technical University of Munich

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Because of its rather large ionization energies compared to Si, dopants of SiC have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy SiC power devices. As a consequence, the effect of dynamic PT has to be taken into account designing SiC devices.

Original language	English
Pages	231-234
Number of pages	4
State	Published - 1999
Event	Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99) - Kyoto, Jpn Duration: 6 Sep 1999 → 8 Sep 1999

Conference

Conference	Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99)
City	Kyoto, Jpn
Period	6/09/99 → 8/09/99

Cite this

@conference{f7a4f153d4334b42ac931a0478eec8d4,

title = "Transient electro-thermal analysis of dynamic punch-through in SiC power devices",

abstract = "Because of its rather large ionization energies compared to Si, dopants of SiC have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy SiC power devices. As a consequence, the effect of dynamic PT has to be taken into account designing SiC devices.",

author = "W. Kaindl and M. Lades and G. Wachutka",

year = "1999",

language = "English",

pages = "231--234",

note = "Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99) ; Conference date: 06-09-1999 Through 08-09-1999",

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TY - CONF

T1 - Transient electro-thermal analysis of dynamic punch-through in SiC power devices

AU - Kaindl, W.

AU - Lades, M.

AU - Wachutka, G.

PY - 1999

Y1 - 1999

N2 - Because of its rather large ionization energies compared to Si, dopants of SiC have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy SiC power devices. As a consequence, the effect of dynamic PT has to be taken into account designing SiC devices.

AB - Because of its rather large ionization energies compared to Si, dopants of SiC have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy SiC power devices. As a consequence, the effect of dynamic PT has to be taken into account designing SiC devices.

UR - https://www.scopus.com/pages/publications/0033285115

M3 - Paper

AN - SCOPUS:0033285115

SP - 231

EP - 234

T2 - Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99)

Y2 - 6 September 1999 through 8 September 1999

ER -

Transient electro-thermal analysis of dynamic punch-through in SiC power devices

Abstract

Conference

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