Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

L. Casagrande, B. M. Barnett, P. Bartalini, W. H. Bell, K. Borer, T. Bowcock, J. Buytaert, P. Chochula, P. Collins, C. Da Via, H. Dijkstra, O. Dormond, A. Esposito, R. Frei, V. Granata, S. Janos, I. Konorov, C. Lourenço, T. O. Niinikoski, S. PaganoV. G. Palmieri, C. Parkes, S. Paul, K. Pretzl, T. Ruf, G. Ruggiero, S. Saladino, L. Schmitt, K. Smith, P. Sonderegger, I. Stavitski, D. Steele, F. Vitobello

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼ 4 × 1014 p/cm2, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.

Original languageEnglish
Pages (from-to)228-231
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 1
StatePublished - 1999


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