Towards Fully Quantum Mechanical 3D Device Simulations

M. Sabathil, S. Hackenbuchner, J. A. Majewski, G. Zandler, P. Vogl

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

We present a simulator for calculating, in a consistent manner, the realistic electronic structure of three-dimensional heterostructure quantum devices under bias and its current density close to equilibrium. The electronic structure is calculated fully quantum mechanically, whereas the current is determined by employing a semiclassical concept of local Fermi levels that are calculated self-consistently. We discuss the numerical techniques employed and present illustrative examples that are compared with quantum transport calculations. In addition, the simulator has been used successfully to study shape-dependent charge localization effects in self-assembled GaAs/InGaAs quantum dots.

Original languageEnglish
Pages (from-to)81-85
Number of pages5
JournalJournal of Computational Electronics
Volume1
Issue number1-2
DOIs
StatePublished - 1 Jul 2002

Keywords

  • nano-devices
  • quantum dots
  • simulations

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