Towards Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H-Si(100)-2×1 Surface

Marcel Walter, Jeremiah Croshaw, Samuel Sze Hang Ng, Konrad Walus, Robert Wolkow, Robert Wille

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Recent advancements in Silicon Dangling Bond (SiDB) fabrication have transitioned from manual to automated processes. However, sub-nanometer substrate defects remain a significant challenge, thus preventing the fabrication of functional logic. Current design automation techniques lack defect-aware strategies. This paper introduces an idea for a surface defect model based on experimentally verified defects, which can be applied to enhance the robustness of established gate libraries. Additionally, a prototypical automatic placement and routing algorithm is presented, utilizing STM data from physical experiments to obtain dot- accurate circuitry resilient to atomic surface defects. Initial evaluations on surfaces with varying defect rates demonstrate their critical impact, suggesting that fabrication processes must achieve defect rates of around 0.1 % to further advance this circuit technology.

Original languageEnglish
Title of host publication2024 Design, Automation and Test in Europe Conference and Exhibition, DATE 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350348590
StatePublished - 2024
Event2024 Design, Automation and Test in Europe Conference and Exhibition, DATE 2024 - Valencia, Spain
Duration: 25 Mar 202427 Mar 2024

Publication series

NameProceedings -Design, Automation and Test in Europe, DATE
ISSN (Print)1530-1591

Conference

Conference2024 Design, Automation and Test in Europe Conference and Exhibition, DATE 2024
Country/TerritorySpain
CityValencia
Period25/03/2427/03/24

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