@inproceedings{e86cd5bdc5b04308830f0bb8d59fae15,
title = "Towards a Hexagonal SiGe Semiconductor Laser",
abstract = "Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.",
author = "Tilburg, \{M. A.J.V.\} and A. Dijkstra and Fadaly, \{E. M.T.\} and Lange, \{V. T.V.\} and Verheijen, \{M. A.\} and Suckert, \{J. R.\} and C. Rodl and J. Furthmuller and F. Bechstedt and S. Botti and D. Busse and Finley, \{J. J.\} and Bakkers, \{E. P.A.M.\} and Haverkort, \{J. E.M.\}",
note = "Publisher Copyright: {\textcopyright} 2020 OSA.; 2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",
year = "2020",
month = may,
language = "English",
series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings",
}