Towards a Hexagonal SiGe Semiconductor Laser

M. A.J.V. Tilburg; A. Dijkstra; E. M.T. Fadaly; V. T.V. Lange; M. A. Verheijen; J. R. Suckert; C. Rodl; J. Furthmuller; F. Bechstedt; S. Botti; D. Busse; J. J. Finley; E. P.A.M. Bakkers; J. E.M. Haverkort

Towards a Hexagonal SiGe Semiconductor Laser

M. A.J.V. Tilburg, A. Dijkstra, E. M.T. Fadaly, V. T.V. Lange, M. A. Verheijen, J. R. Suckert, C. Rodl, J. Furthmuller, F. Bechstedt, S. Botti, D. Busse, J. J. Finley, E. P.A.M. Bakkers, J. E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

Original language	English
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580767
State	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: 10 May 2020 → 15 May 2020

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2020-May
ISSN (Print)	1092-8081

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	10/05/20 → 15/05/20

Cite this

Tilburg, M. A. J. V., Dijkstra, A., Fadaly, E. M. T., Lange, V. T. V., Verheijen, M. A., Suckert, J. R., Rodl, C., Furthmuller, J., Bechstedt, F., Botti, S., Busse, D., Finley, J. J., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2020). Towards a Hexagonal SiGe Semiconductor Laser. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings Article 9192798 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{e86cd5bdc5b04308830f0bb8d59fae15,

title = "Towards a Hexagonal SiGe Semiconductor Laser",

abstract = "Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.",

author = "Tilburg, \{M. A.J.V.\} and A. Dijkstra and Fadaly, \{E. M.T.\} and Lange, \{V. T.V.\} and Verheijen, \{M. A.\} and Suckert, \{J. R.\} and C. Rodl and J. Furthmuller and F. Bechstedt and S. Botti and D. Busse and Finley, \{J. J.\} and Bakkers, \{E. P.A.M.\} and Haverkort, \{J. E.M.\}",

note = "Publisher Copyright: {\textcopyright} 2020 OSA.; 2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

month = may,

language = "English",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings",

}

Tilburg, MAJV, Dijkstra, A, Fadaly, EMT, Lange, VTV, Verheijen, MA, Suckert, JR, Rodl, C, Furthmuller, J, Bechstedt, F, Botti, S, Busse, D, Finley, JJ, Bakkers, EPAM & Haverkort, JEM 2020, Towards a Hexagonal SiGe Semiconductor Laser. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., 9192798, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2020-May, Institute of Electrical and Electronics Engineers Inc., 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 10/05/20.

Towards a Hexagonal SiGe Semiconductor Laser. / Tilburg, M. A.J.V.; Dijkstra, A.; Fadaly, E. M.T. et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9192798 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Towards a Hexagonal SiGe Semiconductor Laser

AU - Tilburg, M. A.J.V.

AU - Dijkstra, A.

AU - Fadaly, E. M.T.

AU - Lange, V. T.V.

AU - Verheijen, M. A.

AU - Suckert, J. R.

AU - Rodl, C.

AU - Furthmuller, J.

AU - Bechstedt, F.

AU - Botti, S.

AU - Busse, D.

AU - Finley, J. J.

AU - Bakkers, E. P.A.M.

AU - Haverkort, J. E.M.

PY - 2020/5

Y1 - 2020/5

N2 - Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

AB - Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

UR - http://www.scopus.com/inward/record.url?scp=85091640516&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85091640516

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Towards a Hexagonal SiGe Semiconductor Laser

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