TLM characterization of planar microwave transformers for monolithic power amplifiers

J. Rebel, P. Russer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method is described in this paper. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. For this a simplified model and a full model of the real transformer are investigated. We found that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Si substrate can be neglected up to 5 GHz.

Original languageEnglish
Title of host publication2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
EditorsWalter Fisch, George E. Ponchak
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-151
Number of pages5
ISBN (Electronic)0780362551, 9780780362550
DOIs
StatePublished - 2000
Event2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000 - Garmisch, Germany
Duration: 28 Apr 2000 → …

Publication series

Name2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Conference

Conference2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000
Country/TerritoryGermany
CityGarmisch
Period28/04/00 → …

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