Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots

A. F.G. Monte; F. V. De Sales; J. J. Finley; A. M. Fox; S. W. Da Silva; P. C. Morais; M. S. Skolnick; M. Hopkins

doi:10.1016/S0026-2692(03)00117-4

Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots

A. F.G. Monte
, F. V. De Sales
, J. J. Finley
, A. M. Fox
, S. W. Da Silva
, P. C. Morais
, M. S. Skolnick
, M. Hopkins

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The results of time-integrated and time-resolved photoluminescence (PL) spectroscopy on red-emitting self-organized InAs/Al_0.6Ga_0.4As quantum dots with indirect barriers were reported. The InAs-Al_0.6Ga_0.4As samples were grown by the Stranski-Krastanow technique using molecular beam epitaxy (MBE) on a [100]-oriented n⁺-GaAs substrate. It was confirmed by spatial resolved PL measurements that carriers excited in the Al_0.6Ga_0.4As barriers were consistent with a carrier hopping process between dots.

Original language	English
Pages (from-to)	747-749
Number of pages	3
Journal	Microelectronics Journal
Volume	34
Issue number	5-8
DOIs	https://doi.org/10.1016/S0026-2692(03)00117-4
State	Published - May 2003
Externally published	Yes

Keywords

Carrier diffusion
Photoluminescence
Quantum dots

Access to Document

10.1016/S0026-2692(03)00117-4

Cite this

@article{186c316451e8426aaa192e19f49bf79c,

title = "Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots",

abstract = "The results of time-integrated and time-resolved photoluminescence (PL) spectroscopy on red-emitting self-organized InAs/Al0.6Ga0.4As quantum dots with indirect barriers were reported. The InAs-Al0.6Ga0.4As samples were grown by the Stranski-Krastanow technique using molecular beam epitaxy (MBE) on a [100]-oriented n+-GaAs substrate. It was confirmed by spatial resolved PL measurements that carriers excited in the Al0.6Ga0.4As barriers were consistent with a carrier hopping process between dots.",

keywords = "Carrier diffusion, Photoluminescence, Quantum dots",

author = "Monte, \{A. F.G.\} and \{De Sales\}, \{F. V.\} and Finley, \{J. J.\} and Fox, \{A. M.\} and \{Da Silva\}, \{S. W.\} and Morais, \{P. C.\} and Skolnick, \{M. S.\} and M. Hopkins",

year = "2003",

month = may,

doi = "10.1016/S0026-2692(03)00117-4",

language = "English",

volume = "34",

pages = "747--749",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Ltd.",

number = "5-8",

}

TY - JOUR

T1 - Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots

AU - Monte, A. F.G.

AU - De Sales, F. V.

AU - Finley, J. J.

AU - Fox, A. M.

AU - Da Silva, S. W.

AU - Morais, P. C.

AU - Skolnick, M. S.

AU - Hopkins, M.

PY - 2003/5

Y1 - 2003/5

N2 - The results of time-integrated and time-resolved photoluminescence (PL) spectroscopy on red-emitting self-organized InAs/Al0.6Ga0.4As quantum dots with indirect barriers were reported. The InAs-Al0.6Ga0.4As samples were grown by the Stranski-Krastanow technique using molecular beam epitaxy (MBE) on a [100]-oriented n+-GaAs substrate. It was confirmed by spatial resolved PL measurements that carriers excited in the Al0.6Ga0.4As barriers were consistent with a carrier hopping process between dots.

AB - The results of time-integrated and time-resolved photoluminescence (PL) spectroscopy on red-emitting self-organized InAs/Al0.6Ga0.4As quantum dots with indirect barriers were reported. The InAs-Al0.6Ga0.4As samples were grown by the Stranski-Krastanow technique using molecular beam epitaxy (MBE) on a [100]-oriented n+-GaAs substrate. It was confirmed by spatial resolved PL measurements that carriers excited in the Al0.6Ga0.4As barriers were consistent with a carrier hopping process between dots.

KW - Carrier diffusion

KW - Photoluminescence

KW - Quantum dots

UR - https://www.scopus.com/pages/publications/0038581515

U2 - 10.1016/S0026-2692(03)00117-4

DO - 10.1016/S0026-2692(03)00117-4

M3 - Article

AN - SCOPUS:0038581515

SN - 0026-2692

VL - 34

SP - 747

EP - 749

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 5-8

ER -

Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this