TY - GEN
T1 - Time-periodic avalanche breakdown at the edge termination of power devices
AU - Knipper, U.
AU - Wachutka, G.
AU - Pfirsch, F.
AU - Raker, T.
AU - Niedermeyr, J.
PY - 2008
Y1 - 2008
N2 - We show that the "variation of lateral doping" (VLD) edge termination technique (Fig. 1) exhibits a surprisingly high robustness in the avalanche regime. This is the consequence of a self-limiting time-periodic current filamentation mechanism, which prevents the VLD structure from being destroyed, in contrast to stable stationary current filaments staying permanently at the same location as it is observed in the commonly used "junction termination extension" (JTE) structure (Fig. 1). Our findings are based on detailed numerical device simulations, which are corroborated by measured data from test devices.
AB - We show that the "variation of lateral doping" (VLD) edge termination technique (Fig. 1) exhibits a surprisingly high robustness in the avalanche regime. This is the consequence of a self-limiting time-periodic current filamentation mechanism, which prevents the VLD structure from being destroyed, in contrast to stable stationary current filaments staying permanently at the same location as it is observed in the commonly used "junction termination extension" (JTE) structure (Fig. 1). Our findings are based on detailed numerical device simulations, which are corroborated by measured data from test devices.
UR - https://www.scopus.com/pages/publications/51549106889
U2 - 10.1109/ISPSD.2008.4538960
DO - 10.1109/ISPSD.2008.4538960
M3 - Conference contribution
AN - SCOPUS:51549106889
SN - 1424415322
SN - 9781424415328
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 307
EP - 310
BT - ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
T2 - ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
Y2 - 18 May 2008 through 22 May 2008
ER -