Time domain characterization of planar microwave transformers using the SCN-TLM method

Juergen Rebel; Hans Dieter Wohlmuth; Peter Russer

doi:10.1109/MWSYM.2000.863551

Time domain characterization of planar microwave transformers using the SCN-TLM method

Juergen Rebel
, Hans Dieter Wohlmuth
, Peter Russer

Technical University of Munich

Technical University of Munich
Infineon Technologies AG

Research output: Contribution to journal › Article › peer-review

Abstract

This paper describes the time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. It emerges that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Silicon substrate can be neglected up to 5 GHz.

Original language	English
Pages (from-to)	1109-1112
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
DOIs	https://doi.org/10.1109/MWSYM.2000.863551
State	Published - 2000

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title = "Time domain characterization of planar microwave transformers using the SCN-TLM method",

abstract = "This paper describes the time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. It emerges that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Silicon substrate can be neglected up to 5 GHz.",

author = "Juergen Rebel and Wohlmuth, \{Hans Dieter\} and Peter Russer",

year = "2000",

doi = "10.1109/MWSYM.2000.863551",

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AU - Wohlmuth, Hans Dieter

AU - Russer, Peter

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N2 - This paper describes the time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. It emerges that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Silicon substrate can be neglected up to 5 GHz.

AB - This paper describes the time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. It emerges that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Silicon substrate can be neglected up to 5 GHz.

UR - https://www.scopus.com/pages/publications/0033724624

U2 - 10.1109/MWSYM.2000.863551

DO - 10.1109/MWSYM.2000.863551

M3 - Article

AN - SCOPUS:0033724624

SN - 0149-645X

VL - 2

SP - 1109

EP - 1112

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

ER -

Time domain characterization of planar microwave transformers using the SCN-TLM method

Abstract

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