Thin films of HfO2 for high- k gate oxide applications from engineered alkoxide- and amide-based MOCVD precursors

Reji Thomas, Eduard Rije, Peter Ehrhart, Andrian Milanov, Raghunandan Bhakta, Arne Bauneman, Anjana Devi, Roland Fischer, Rainer Waser

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

HfO2 thin films with thickness between 2 and 20 nm were grown by liquid injection metallorganic chemical vapor deposition, LI-MOCVD, on SiOx Si(100) substrates. Different mononuclear precursors ([Hf (OPri) 2 (tbaoac) 2], [Hf (NEt2) 2 (guanid) 2], and [Hf (OBut) 2 (dmae) 2] were tested in combination with different solvents. Growth rate, surface morphology, crystal structure, and crystal density of the as-deposited films were analyzed as a function of deposition temperature. The influence of postdeposition annealing on the densification and crystallization was studied. Correlation of the structural properties with the electrical properties of metal insulator semiconductor capacitors with Pt top electrodes is discussed. Fully silicided metal gate stacks are additionally discussed for selected samples.

Original languageEnglish
Pages (from-to)G77-G84
JournalJournal of the Electrochemical Society
Volume154
Issue number3
DOIs
StatePublished - 2007
Externally publishedYes

Fingerprint

Dive into the research topics of 'Thin films of HfO2 for high- k gate oxide applications from engineered alkoxide- and amide-based MOCVD precursors'. Together they form a unique fingerprint.

Cite this