Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

Keyphrases

• Device Performance 100%
• Room Temperature 100%
• Analysis Performance 100%
• Buried Tunnel Junction 100%
• Vertical-cavity Surface-emitting Laser (VCSEL) 100%
• Thermal Conductivity Analysis 100%
• InGaAlAs 100%
• Finite Element Analysis 50%
• Mode-dependent Gain 50%
• Temperature Behavior 50%
• Thermal Resistance 50%
• Maximum Power 50%
• Cavity Mode 50%
• CW Operation 50%
• Threshold Current 50%
• Laser Operation 50%
• Heat Flow 50%
• Low Thermal Conductivity 50%
• InP-based 50%
• Compound Layer 50%
• Heat Spreading 50%
• Spreading Layer 50%
• Metal-backed 50%
• Back Mirror 50%
• Spectral Gain 50%
• Laser Show 50%
• Long-wavelength VCSELs 50%
• Hybrid Dielectric 50%

Engineering

• Device Performance 100%
• Thermal Conductivity 100%
• Room Temperature 100%
• Tunnel 100%
• Dielectrics 50%
• Experimental Result 50%
• Current Threshold 50%
• Temperature Behavior 50%
• Low Thermal Conductivity 50%
• Compound Layer 50%
• Finite Element Analysis 50%
• Heat Resistance 50%