Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

M. Ortsiefer; R. Shau; G. Bühm; F. Kühler; J. Rosskopf; M. C. Amann

doi:10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E

Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

M. Ortsiefer
, R. Shau
, G. Bühm
, F. Kühler
, J. Rosskopf
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

Original language	English
Pages (from-to)	913-919
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	3
DOIs	https://doi.org/10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E
State	Published - 2001

Access to Document

10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E

Cite this

@article{c18f8a2986fb4f2eac3279872cabbff1,

title = "Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs",

abstract = "The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.",

author = "M. Ortsiefer and R. Shau and G. B{\"u}hm and F. K{\"u}hler and J. Rosskopf and Amann, \{M. C.\}",

year = "2001",

doi = "10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E",

language = "English",

volume = "188",

pages = "913--919",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

AU - Ortsiefer, M.

AU - Shau, R.

AU - Bühm, G.

AU - Kühler, F.

AU - Rosskopf, J.

AU - Amann, M. C.

PY - 2001

Y1 - 2001

N2 - The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

AB - The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

UR - https://www.scopus.com/pages/publications/3142684609

U2 - 10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E

DO - 10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E

M3 - Article

AN - SCOPUS:3142684609

SN - 0031-8965

VL - 188

SP - 913

EP - 919

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 3

ER -

Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this