Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

M. Ortsiefer; R. Shau; G. Bühm; F. Kühler; J. Rosskopf; M. C. Amann

doi:10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E

Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

M. Ortsiefer, R. Shau, G. Bühm, F. Kühler, J. Rosskopf, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

Original language	English
Pages (from-to)	913-919
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	3
DOIs	https://doi.org/10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E
State	Published - 2001

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10.1002/1521-396X(200112)188:3<913::AID-PSSA913>3.0.CO;2-E

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abstract = "The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.",

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AU - Ortsiefer, M.

AU - Shau, R.

AU - Bühm, G.

AU - Kühler, F.

AU - Rosskopf, J.

AU - Amann, M. C.

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N2 - The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

AB - The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

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Thermal conductivity analysis and device performance of 1.55 μm InGaAlAs/InP buried tunnel junction VCSELs

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