Abstract
The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 °C with a maximum power exceeding 2 mW at room temperature for 17 μm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.
Original language | English |
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Pages (from-to) | 913-919 |
Number of pages | 7 |
Journal | Physica Status Solidi (A) Applied Research |
Volume | 188 |
Issue number | 3 |
DOIs | |
State | Published - 2001 |