Theoretical study of electrolyte gate AlGaN/GaN field effect transistors

M. Bayer, C. Uhl, P. Vogl

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


We predict the sensitivity of solution gate AlGaN/GaN field effect transistors to pH values of the electrolyte and to charged adsorbates at the semiconductor-electrolyte interface. Invoking the site-binding model for the chemical reactions at the oxidic semiconductor-electrolyte interface and taking into account the large polarization fields within the nitride heterostructure, the spatial charge and potential distribution have been calculated self-consistently both in the semiconductor and the electrolyte. In addition, the source-drain current is calculated and its sensitivity to the electrolyte's pH value is studied systematically. Comparison with experiment shows good agreement. A significantly enhanced resolution is predicted for AlGaN/GaN structures of N-face polarity.

Original languageEnglish
Article number033703
JournalJournal of Applied Physics
Issue number3
StatePublished - 1 Feb 2005
Externally publishedYes


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