Theoretical insights into CoSi2/CaF2 tunneling diodes

C. Strahberger, P. Vogl

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

We performed multi-band-multi-channel transport calculations within the framework of empirical tight binding on triple barrier metal(CoSi2)/insulator(CaF2) resonant tunneling diodes. The incorporation of realistic band structures turned out to be important for an adequate description, since the peak transport occurs far from the Γ-point. The observed resonances are predicted to be relatively stable to well-thickness fluctuations, but depend sensitively on barrier.

Original languageEnglish
Pages (from-to)160-162
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - 1 Dec 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 19 Jul 199923 Jul 1999

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