The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires

D. Spirkoska; C. Colombo; M. Heiss; G. Abstreiter; A. Fontcuberta I Morral

doi:10.1088/0953-8984/20/45/454225

The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires

D. Spirkoska
, C. Colombo
, M. Heiss
, G. Abstreiter
, A. Fontcuberta I Morral

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy(MBE) are reviewed. The two main techniques are selective-area epitaxy(SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.

Original language	English
Article number	454225
Journal	Journal of Physics Condensed Matter
Volume	20
Issue number	45
DOIs	https://doi.org/10.1088/0953-8984/20/45/454225
State	Published - 12 Nov 2008

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title = "The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires",

abstract = "The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy(MBE) are reviewed. The two main techniques are selective-area epitaxy(SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.",

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AU - Spirkoska, D.

AU - Colombo, C.

AU - Heiss, M.

AU - Abstreiter, G.

AU - Fontcuberta I Morral, A.

PY - 2008/11/12

Y1 - 2008/11/12

N2 - The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy(MBE) are reviewed. The two main techniques are selective-area epitaxy(SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.

AB - The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy(MBE) are reviewed. The two main techniques are selective-area epitaxy(SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.

UR - https://www.scopus.com/pages/publications/58149339928

U2 - 10.1088/0953-8984/20/45/454225

DO - 10.1088/0953-8984/20/45/454225

M3 - Article

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VL - 20

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 45

M1 - 454225

ER -

The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires

Abstract

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