The tunneling field effect transistor (TFET): The temperature dependence, the simulation model, and its application

Thomas Nirschl; Peng Fei Wang; Walter Hansch; Doris Schmitt-Landsiedel

The tunneling field effect transistor (TFET): The temperature dependence, the simulation model, and its application

Thomas Nirschl
, Peng Fei Wang
, Walter Hansch
, Doris Schmitt-Landsiedel

Medicine and Health

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

45 Scopus citations

Abstract

The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: Measurements are performed to verify the working principle and the temperature dependence of the TFET. A simulation model is developed and fitted to the silicon results to be able to do circuit design. Using the simulation models for the n-channel and p-channel device, the complementary inverter is analyzed and compared to the standard CMOS implementation.

Original language	English
Pages (from-to)	III713-III716
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	3
State	Published - 2004
Event	2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada Duration: 23 May 2004 → 26 May 2004

Cite this

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title = "The tunneling field effect transistor (TFET): The temperature dependence, the simulation model, and its application",

abstract = "The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: Measurements are performed to verify the working principle and the temperature dependence of the TFET. A simulation model is developed and fitted to the silicon results to be able to do circuit design. Using the simulation models for the n-channel and p-channel device, the complementary inverter is analyzed and compared to the standard CMOS implementation.",

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AU - Nirschl, Thomas

AU - Wang, Peng Fei

AU - Hansch, Walter

AU - Schmitt-Landsiedel, Doris

PY - 2004

Y1 - 2004

N2 - The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: Measurements are performed to verify the working principle and the temperature dependence of the TFET. A simulation model is developed and fitted to the silicon results to be able to do circuit design. Using the simulation models for the n-channel and p-channel device, the complementary inverter is analyzed and compared to the standard CMOS implementation.

AB - The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: Measurements are performed to verify the working principle and the temperature dependence of the TFET. A simulation model is developed and fitted to the silicon results to be able to do circuit design. Using the simulation models for the n-channel and p-channel device, the complementary inverter is analyzed and compared to the standard CMOS implementation.

UR - https://www.scopus.com/pages/publications/4344599123

M3 - Conference article

AN - SCOPUS:4344599123

SN - 0271-4310

VL - 3

SP - III713-III716

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

Y2 - 23 May 2004 through 26 May 2004

ER -

The tunneling field effect transistor (TFET): The temperature dependence, the simulation model, and its application

Abstract

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