The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

J. W. Cockburn; J. J. Finley; M. S. Skolnick; P. Wisniewski; R. Teissier; R. Grey; G. Hill; M. A. Pate

doi:10.1006/spmi.1996.0224

The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

J. W. Cockburn
, J. J. Finley
, M. S. Skolnick
, P. Wisniewski
, R. Teissier
, R. Grey
, G. Hill
, M. A. Pate

University of Sheffield
Institute of High Pressure Physics PAS
Institut de Neurosciences de la Timone, Centre National de la Recherche Scientifique - Aix-Marseille University

Research output: Contribution to journal › Article › peer-review

Abstract

We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Superlattices and Microstructures
Volume	22
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1996.0224
State	Published - Sep 1997
Externally published	Yes

Keywords

Electroluminescence
Hot carriers
Intervalley scattering

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10.1006/spmi.1996.0224

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title = "The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy",

abstract = "We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.",

keywords = "Electroluminescence, Hot carriers, Intervalley scattering",

author = "Cockburn, \{J. W.\} and Finley, \{J. J.\} and Skolnick, \{M. S.\} and P. Wisniewski and R. Teissier and R. Grey and G. Hill and Pate, \{M. A.\}",

year = "1997",

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doi = "10.1006/spmi.1996.0224",

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journal = "Superlattices and Microstructures",

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T1 - The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

AU - Cockburn, J. W.

AU - Finley, J. J.

AU - Skolnick, M. S.

AU - Wisniewski, P.

AU - Teissier, R.

AU - Grey, R.

AU - Hill, G.

AU - Pate, M. A.

PY - 1997/9

Y1 - 1997/9

N2 - We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.

AB - We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.

KW - Electroluminescence

KW - Hot carriers

KW - Intervalley scattering

UR - https://www.scopus.com/pages/publications/0030689357

U2 - 10.1006/spmi.1996.0224

DO - 10.1006/spmi.1996.0224

M3 - Article

AN - SCOPUS:0030689357

SN - 0749-6036

VL - 22

SP - 199

EP - 202

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

Abstract

Keywords

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