The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

J. W. Cockburn; J. J. Finley; M. S. Skolnick; P. Wisniewski; R. Teissier; R. Grey; G. Hill; M. A. Pate

doi:10.1006/spmi.1996.0224

The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

J. W. Cockburn, J. J. Finley, M. S. Skolnick, P. Wisniewski, R. Teissier, R. Grey, G. Hill, M. A. Pate

Research output: Contribution to journal › Article › peer-review

Abstract

We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Superlattices and Microstructures
Volume	22
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1996.0224
State	Published - Sep 1997
Externally published	Yes

Keywords

Electroluminescence
Hot carriers
Intervalley scattering

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10.1006/spmi.1996.0224

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title = "The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy",

abstract = "We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.",

keywords = "Electroluminescence, Hot carriers, Intervalley scattering",

author = "Cockburn, {J. W.} and Finley, {J. J.} and Skolnick, {M. S.} and P. Wisniewski and R. Teissier and R. Grey and G. Hill and Pate, {M. A.}",

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T1 - The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

AU - Cockburn, J. W.

AU - Finley, J. J.

AU - Skolnick, M. S.

AU - Wisniewski, P.

AU - Teissier, R.

AU - Grey, R.

AU - Hill, G.

AU - Pate, M. A.

PY - 1997/9

Y1 - 1997/9

N2 - We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.

AB - We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the Γ-L and Γ-X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.

KW - Electroluminescence

KW - Hot carriers

KW - Intervalley scattering

UR - http://www.scopus.com/inward/record.url?scp=0030689357&partnerID=8YFLogxK

U2 - 10.1006/spmi.1996.0224

DO - 10.1006/spmi.1996.0224

M3 - Article

AN - SCOPUS:0030689357

SN - 0749-6036

VL - 22

SP - 199

EP - 202

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy

Abstract

Keywords

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