The origin to various PL-bands in Si/Ge strain-symmetrized superlattices

Janos Olajos; Stefan Nilsson; Markus Gail; Gerhard Abstreiter

doi:10.1016/S0167-9317(98)00159-2

The origin to various PL-bands in Si/Ge strain-symmetrized superlattices

Janos Olajos
, Stefan Nilsson
, Markus Gail
, Gerhard Abstreiter

TUM Emeriti of Excellence

Lund University
IHP Microelectronics GmbH
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

Abstract

A systematic study of the spacial origin to various luminescence peaks in a strain-symmetrized Si₆Ge₄ superlattice have been perfomed by varying the wavelength of the excitation laser and by selectively etching the sample layer-by-layer and continuously measuring the luminescence. From these measurements we were able to identify the no-phonon luminescense from the superlattice, the defect related L-line luminescence from the constant-composition alloy buffer, and dislocation related D₁ and D₂ bands in the graded buffer.

Original language	English
Pages (from-to)	165-170
Number of pages	6
Journal	Microelectronic Engineering
Volume	43-44
DOIs	https://doi.org/10.1016/S0167-9317(98)00159-2
State	Published - 1 Aug 1998

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abstract = "A systematic study of the spacial origin to various luminescence peaks in a strain-symmetrized Si6Ge4 superlattice have been perfomed by varying the wavelength of the excitation laser and by selectively etching the sample layer-by-layer and continuously measuring the luminescence. From these measurements we were able to identify the no-phonon luminescense from the superlattice, the defect related L-line luminescence from the constant-composition alloy buffer, and dislocation related D1 and D2 bands in the graded buffer.",

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AU - Olajos, Janos

AU - Nilsson, Stefan

AU - Gail, Markus

AU - Abstreiter, Gerhard

PY - 1998/8/1

Y1 - 1998/8/1

N2 - A systematic study of the spacial origin to various luminescence peaks in a strain-symmetrized Si6Ge4 superlattice have been perfomed by varying the wavelength of the excitation laser and by selectively etching the sample layer-by-layer and continuously measuring the luminescence. From these measurements we were able to identify the no-phonon luminescense from the superlattice, the defect related L-line luminescence from the constant-composition alloy buffer, and dislocation related D1 and D2 bands in the graded buffer.

AB - A systematic study of the spacial origin to various luminescence peaks in a strain-symmetrized Si6Ge4 superlattice have been perfomed by varying the wavelength of the excitation laser and by selectively etching the sample layer-by-layer and continuously measuring the luminescence. From these measurements we were able to identify the no-phonon luminescense from the superlattice, the defect related L-line luminescence from the constant-composition alloy buffer, and dislocation related D1 and D2 bands in the graded buffer.

UR - https://www.scopus.com/pages/publications/0348201005

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DO - 10.1016/S0167-9317(98)00159-2

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VL - 43-44

SP - 165

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

The origin to various PL-bands in Si/Ge strain-symmetrized superlattices

Abstract

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