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The origin of red luminescence from Mg-doped GaN

  • M. W. Bayerl
  • , M. S. Brandt
  • , E. R. Glaser
  • , A. E. Wickenden
  • , D. D. Koleske
  • , R. L. Henry
  • , M. Stutzmann
  • Walter Schottky Institut
  • Naval Research Laboratory

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

In addition to broad photoluminescence (PL) bands at 3.2 and 2.8 eV, Mg-doped GaN also exhibits a characteristic red PL band centered around 1.75 eV. Using optically detected magnetic resonance (ODMR), a deep defect with an isotropic g-value of 2.001 and a linewidth of 5 mT is found to be responsible for the red luminescence. Various shallow and deep donors are also found to participate in this radiative transition. The results are compared to the ODMR of n-type GaN.

Original languageEnglish
Pages (from-to)547-550
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
StatePublished - Nov 1999

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