TY - JOUR
T1 - The mobility and dynamical conductivity of Na-doped Si-(100) MOS systems
AU - Gold, A.
AU - Götze, W.
N1 - Funding Information:
Acknowledgements-The authors thank Prof. F. Koch and C. Mazure for discussions and for the permission to show the data of Fig. 3 prior to publication. This work was supported by the Deutsche Forschungsgemeinschaft.
PY - 1985
Y1 - 1985
N2 - The self-consistent current relaxation theory, extended to incorporate electron interaction effects within the random phase approximation modified by local field corrections, is discussed and applied to evaluate the dynamical structure factor and the conductivity of a Si(100)-MOS system which is heavily doped with Na ions. A unified treatment of plasmon dynamics, electron impurity screening effects and the disorder induced conductor insulator transition is obtained. Results for the mobility, the metal insulator phase diagram and the dynamical conductivity are compared with experiments.
AB - The self-consistent current relaxation theory, extended to incorporate electron interaction effects within the random phase approximation modified by local field corrections, is discussed and applied to evaluate the dynamical structure factor and the conductivity of a Si(100)-MOS system which is heavily doped with Na ions. A unified treatment of plasmon dynamics, electron impurity screening effects and the disorder induced conductor insulator transition is obtained. Results for the mobility, the metal insulator phase diagram and the dynamical conductivity are compared with experiments.
UR - http://www.scopus.com/inward/record.url?scp=0021299226&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(85)90214-X
DO - 10.1016/0038-1101(85)90214-X
M3 - Article
AN - SCOPUS:0021299226
SN - 0038-1101
VL - 28
SP - 87
EP - 91
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 1-2
ER -