The IT photo pixel cell using the Tunneling Field Effect Transistor (TFET)

Thomas Nirschl; Agnese Bargagli-Stoffi; Jürgen Fischer; Stephan Henzler; Peng Fei Wang; Martin Sterkel; Walter Hansch; Doris Schmitt-Landsiedel

doi:10.1109/VLSIC.2005.1469335

The IT photo pixel cell using the Tunneling Field Effect Transistor (TFET)

Thomas Nirschl
, Agnese Bargagli-Stoffi
, Jürgen Fischer
, Stephan Henzler
, Peng Fei Wang
, Martin Sterkel
, Walter Hansch
, Doris Schmitt-Landsiedel

Medicine and Health

Technical University of Munich
Infineon Technologies AG

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

The Tunneling Field Effect Transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device. A pin diode as light sensor is combined in a single device with a MOS-gate to select a single cell out of a column of a cell array. Additionally, the 1T photo pixel can be tuned with respect to sensitivity range and signal amplitude by the biasing parameters.

Original language	English
Pages	66-67
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIC.2005.1469335
State	Published - 2005
Event	2005 Symposium on VLSI Circuits - Kyoto, Japan Duration: 16 Jun 2005 → 18 Jun 2005

Conference

Conference	2005 Symposium on VLSI Circuits
Country/Territory	Japan
City	Kyoto
Period	16/06/05 → 18/06/05

Keywords

CMOS and Silicon
Photo Pixel
TFET

Access to Document

10.1109/VLSIC.2005.1469335

Cite this

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title = "The IT photo pixel cell using the Tunneling Field Effect Transistor (TFET)",

abstract = "The Tunneling Field Effect Transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device. A pin diode as light sensor is combined in a single device with a MOS-gate to select a single cell out of a column of a cell array. Additionally, the 1T photo pixel can be tuned with respect to sensitivity range and signal amplitude by the biasing parameters.",

keywords = "CMOS and Silicon, Photo Pixel, TFET",

author = "Thomas Nirschl and Agnese Bargagli-Stoffi and J{\"u}rgen Fischer and Stephan Henzler and Wang, \{Peng Fei\} and Martin Sterkel and Walter Hansch and Doris Schmitt-Landsiedel",

year = "2005",

doi = "10.1109/VLSIC.2005.1469335",

language = "English",

pages = "66--67",

note = "2005 Symposium on VLSI Circuits ; Conference date: 16-06-2005 Through 18-06-2005",

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T1 - The IT photo pixel cell using the Tunneling Field Effect Transistor (TFET)

AU - Nirschl, Thomas

AU - Bargagli-Stoffi, Agnese

AU - Fischer, Jürgen

AU - Henzler, Stephan

AU - Wang, Peng Fei

AU - Sterkel, Martin

AU - Hansch, Walter

AU - Schmitt-Landsiedel, Doris

PY - 2005

Y1 - 2005

N2 - The Tunneling Field Effect Transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device. A pin diode as light sensor is combined in a single device with a MOS-gate to select a single cell out of a column of a cell array. Additionally, the 1T photo pixel can be tuned with respect to sensitivity range and signal amplitude by the biasing parameters.

AB - The Tunneling Field Effect Transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device. A pin diode as light sensor is combined in a single device with a MOS-gate to select a single cell out of a column of a cell array. Additionally, the 1T photo pixel can be tuned with respect to sensitivity range and signal amplitude by the biasing parameters.

KW - CMOS and Silicon

KW - Photo Pixel

KW - TFET

UR - https://www.scopus.com/pages/publications/33745177360

U2 - 10.1109/VLSIC.2005.1469335

DO - 10.1109/VLSIC.2005.1469335

M3 - Paper

AN - SCOPUS:33745177360

SP - 66

EP - 67

T2 - 2005 Symposium on VLSI Circuits

Y2 - 16 June 2005 through 18 June 2005

ER -

The IT photo pixel cell using the Tunneling Field Effect Transistor (TFET)

Abstract

Conference

Keywords

Access to Document

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