The influence of the semiconductor properties on the Mössbauer emission spectra of 57Co cobalt oxide

T. Harami; J. Loock; E. Huenges; J. Fontcuberta; X. Obradors; J. Tejada; F. Parak

doi:10.1016/0022-3697(84)90117-3

The influence of the semiconductor properties on the Mössbauer emission spectra of ⁵⁷Co cobalt oxide

T. Harami, J. Loock, E. Huenges, J. Fontcuberta, X. Obradors, J. Tejada, F. Parak

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

⁵⁷CO_1-xO Mössbauer sources were prepared at 1000°C and different oxygen pressures. The number x of Co vacancies, which depend on the oxygen pressure during the preparation, determine the Fe³⁺ fraction in the emission spectrum of the source at room-temperature. A theoretical model allows a correlation between these quantities. Measurements on ⁵⁷Co_1-xO sources between room-temperature and 1000°C proved that at temperatures above 500°C electron relaxations between the ⁵⁷Fe^m impurity, introduced in the lattice as a consequence of the ⁵⁷Co decay, and the valence band take place. A theoretical model was developed which describes these relaxation phenomena reasonably well.

Original language	English
Pages (from-to)	181-190
Number of pages	10
Journal	Journal of Physics and Chemistry of Solids
Volume	45
Issue number	2
DOIs	https://doi.org/10.1016/0022-3697(84)90117-3
State	Published - 1984
Externally published	Yes

Access to Document

10.1016/0022-3697(84)90117-3

Cite this

@article{b733d8f0dd66439d82e8df9ddfca7aec,

title = "The influence of the semiconductor properties on the M{\"o}ssbauer emission spectra of 57Co cobalt oxide",

abstract = "57CO1-xO M{\"o}ssbauer sources were prepared at 1000°C and different oxygen pressures. The number x of Co vacancies, which depend on the oxygen pressure during the preparation, determine the Fe3+ fraction in the emission spectrum of the source at room-temperature. A theoretical model allows a correlation between these quantities. Measurements on 57Co1-xO sources between room-temperature and 1000°C proved that at temperatures above 500°C electron relaxations between the 57Fem impurity, introduced in the lattice as a consequence of the 57Co decay, and the valence band take place. A theoretical model was developed which describes these relaxation phenomena reasonably well.",

author = "T. Harami and J. Loock and E. Huenges and J. Fontcuberta and X. Obradors and J. Tejada and F. Parak",

year = "1984",

doi = "10.1016/0022-3697(84)90117-3",

language = "English",

volume = "45",

pages = "181--190",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd.",

number = "2",

}

TY - JOUR

T1 - The influence of the semiconductor properties on the Mössbauer emission spectra of 57Co cobalt oxide

AU - Harami, T.

AU - Loock, J.

AU - Huenges, E.

AU - Fontcuberta, J.

AU - Obradors, X.

AU - Tejada, J.

AU - Parak, F.

PY - 1984

Y1 - 1984

N2 - 57CO1-xO Mössbauer sources were prepared at 1000°C and different oxygen pressures. The number x of Co vacancies, which depend on the oxygen pressure during the preparation, determine the Fe3+ fraction in the emission spectrum of the source at room-temperature. A theoretical model allows a correlation between these quantities. Measurements on 57Co1-xO sources between room-temperature and 1000°C proved that at temperatures above 500°C electron relaxations between the 57Fem impurity, introduced in the lattice as a consequence of the 57Co decay, and the valence band take place. A theoretical model was developed which describes these relaxation phenomena reasonably well.

AB - 57CO1-xO Mössbauer sources were prepared at 1000°C and different oxygen pressures. The number x of Co vacancies, which depend on the oxygen pressure during the preparation, determine the Fe3+ fraction in the emission spectrum of the source at room-temperature. A theoretical model allows a correlation between these quantities. Measurements on 57Co1-xO sources between room-temperature and 1000°C proved that at temperatures above 500°C electron relaxations between the 57Fem impurity, introduced in the lattice as a consequence of the 57Co decay, and the valence band take place. A theoretical model was developed which describes these relaxation phenomena reasonably well.

UR - http://www.scopus.com/inward/record.url?scp=0021161229&partnerID=8YFLogxK

U2 - 10.1016/0022-3697(84)90117-3

DO - 10.1016/0022-3697(84)90117-3

M3 - Article

AN - SCOPUS:0021161229

SN - 0022-3697

VL - 45

SP - 181

EP - 190

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 2

ER -

The influence of the semiconductor properties on the Mössbauer emission spectra of ⁵⁷Co cobalt oxide

Abstract

Access to Document

Other files and links

Fingerprint

Cite this