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The influence of the Al-content on the optical gain in AlGaN heterostructures
Jens Holst
, Ludger Eckey
, Axel Hoffmann
, Oliver Ambacher
,
Martin Stutzmann
TUM Emeriti of Excellence
Technische Universität Berlin
Walter Schottky Institut
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
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Keyphrases
Heterostructure
100%
Electron-hole Plasma
100%
Optical Gain
100%
Al Content
100%
Aluminum Gallium Nitride (AlGaN)
100%
Filling Process
66%
Excitation Density
66%
Band Filling
66%
Laser Pulse
33%
Recombination
33%
Photoluminescence Measurements
33%
Sapphire
33%
Phonons
33%
Excimer Laser
33%
Threshold Intensity
33%
Aluminum Content
33%
Gain Property
33%
Gain Mechanism
33%
Defect Content
33%
AlGaN Epilayer
33%
Gain Measurement
33%
Engineering
Filling Process
100%
Heterostructures
100%
Al Content
100%
Excitation Density
100%
Optical Gain
100%
Nanosecond
50%
Excimer Laser
50%
Material Science
Density
100%
Heterojunction
100%
Photoluminescence
50%
Aluminum
50%
Molecular Beam Epitaxy
50%
Sapphire
50%
Laser Pulse
50%
Epilayers
50%
Physics
Holes (Electron Deficiencies)
100%
Laser Pulse
33%
Molecular Beam Epitaxy
33%
Photoluminescence
33%
Excimer Laser
33%
Phonon
33%