Abstract
A model for in-plane-gated structures is proposed, taking into account surface currents and surface charges. The lateral band structures and barrier heights are calculated self-consistently for different bias voltages utilizing this new model. Accumulated negative surface charges lead to a strongly increased depletion length at the positively biased side of the lateral barriers. Most of the applied bias drops in this depleted region and does not affect the barrier height. We have found good agreement between these theoretical results and experimentally determined barrier heights and depletion lengths obtained from temperature-dependent current measurements and optical-beam-induced current measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 587-594 |
| Number of pages | 8 |
| Journal | Superlattices and Microstructures |
| Volume | 20 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1996 |