TY - GEN
T1 - The influence of high temperatures on radiation damage of GaInP 2/GaAs/Ge triple junction cells
AU - Brandt, Christian
AU - Baur, Carsten
AU - Caon, Antonio
AU - Müller-Buschbaum, Peter
AU - Zimmermann, Claus
AU - Andreev, Thomas
PY - 2012
Y1 - 2012
N2 - We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.
AB - We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.
KW - Solar cells
KW - particle irradiation
KW - space missions
UR - http://www.scopus.com/inward/record.url?scp=84891112291&partnerID=8YFLogxK
U2 - 10.1109/PVSC-Vol2.2013.6656726
DO - 10.1109/PVSC-Vol2.2013.6656726
M3 - Conference contribution
AN - SCOPUS:84891112291
SN - 9781467328883
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
T2 - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
Y2 - 3 June 2012 through 8 June 2012
ER -