The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation

H. P. Felsl, G. Wachutka, R. Rupp

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We performed a numerical analysis of 4H-SiC high power Schottky diodes under forward bias conditions. It showed that self-heating processes in conjunction with high current densities strongly affect the device operation. Our device simulations were based on new experimental datafacts for the non-linear temperature dependence of the thermal conductivity κ(T) and well-known values for the heat capacity c(T). Both single pulse operation and operation under constant current pulses with a defined duty-cycle were analyzed in detail, and two different device structures were compared with each other.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsPeder Bergman, Erik Janzén
PublisherTrans Tech Publications Ltd
Pages839-842
Number of pages4
ISBN (Print)9780878499205
DOIs
StatePublished - 2003
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: 2 Sep 20025 Sep 2002

Publication series

NameMaterials Science Forum
Volume433-436
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceProceedings of the 4th European Conference on Silicon Carbide and Related Materials
Country/TerritorySweden
CityLinkoping
Period2/09/025/09/02

Keywords

  • Electrothermal Device Simulation
  • Schottky Diode
  • SiC Power Devices

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