The dynamical conductivity of a Na+-doped interfacial charge layer on silicon

A. Gold; W. Götze; C. Mazuré; F. Koch

doi:10.1016/0038-1098(84)90429-0

The dynamical conductivity of a Na⁺-doped interfacial charge layer on silicon

A. Gold
, W. Götze
, C. Mazuré
, F. Koch

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Measured dynamical conductivities in accumulation layers doped with Na⁺ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.

Original language	English
Pages (from-to)	1085-1088
Number of pages	4
Journal	Solid State Communications
Volume	49
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(84)90429-0
State	Published - Mar 1984

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@article{2b7f3aad81de4753b395edd06b94a014,

title = "The dynamical conductivity of a Na+-doped interfacial charge layer on silicon",

abstract = "Measured dynamical conductivities in accumulation layers doped with Na+ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.",

author = "A. Gold and W. G{\"o}tze and C. Mazur{\'e} and F. Koch",

year = "1984",

month = mar,

doi = "10.1016/0038-1098(84)90429-0",

language = "English",

volume = "49",

pages = "1085--1088",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "11",

}

TY - JOUR

T1 - The dynamical conductivity of a Na+-doped interfacial charge layer on silicon

AU - Gold, A.

AU - Götze, W.

AU - Mazuré, C.

AU - Koch, F.

PY - 1984/3

Y1 - 1984/3

N2 - Measured dynamical conductivities in accumulation layers doped with Na+ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.

AB - Measured dynamical conductivities in accumulation layers doped with Na+ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.

UR - https://www.scopus.com/pages/publications/0021391265

U2 - 10.1016/0038-1098(84)90429-0

DO - 10.1016/0038-1098(84)90429-0

M3 - Article

AN - SCOPUS:0021391265

SN - 0038-1098

VL - 49

SP - 1085

EP - 1088

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

The dynamical conductivity of a Na⁺-doped interfacial charge layer on silicon

Abstract

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