The dynamical conductivity of a Na+-doped interfacial charge layer on silicon

A. Gold; W. Götze; C. Mazuré; F. Koch

doi:10.1016/0038-1098(84)90429-0

The dynamical conductivity of a Na⁺-doped interfacial charge layer on silicon

A. Gold, W. Götze, C. Mazuré, F. Koch

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Technical University of Munich

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16 Scopus citations

Abstract

Measured dynamical conductivities in accumulation layers doped with Na⁺ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.

Original language	English
Pages (from-to)	1085-1088
Number of pages	4
Journal	Solid State Communications
Volume	49
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(84)90429-0
State	Published - Mar 1984

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title = "The dynamical conductivity of a Na+-doped interfacial charge layer on silicon",

abstract = "Measured dynamical conductivities in accumulation layers doped with Na+ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.",

author = "A. Gold and W. G{\"o}tze and C. Mazur{\'e} and F. Koch",

year = "1984",

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T1 - The dynamical conductivity of a Na+-doped interfacial charge layer on silicon

AU - Gold, A.

AU - Götze, W.

AU - Mazuré, C.

AU - Koch, F.

PY - 1984/3

Y1 - 1984/3

N2 - Measured dynamical conductivities in accumulation layers doped with Na+ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.

AB - Measured dynamical conductivities in accumulation layers doped with Na+ on (100)-Si are reported and analyzed with a theory of a strongly disturbed two-dimensional interacting electron gas and explained in terms of localization-and screening breakdown effects.

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VL - 49

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JO - Solid State Communications

JF - Solid State Communications

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The dynamical conductivity of a Na⁺-doped interfacial charge layer on silicon

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