The doping efficiency in amorphous silicon and germanium

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Abstract

The incorporation probability and the doping efficiency of phosphorus, arsenic and boron in glow-discharge-deposited hydrogenated amorphous silicon and germanium have been measured. All dopant-host pairs show the same doping efficiency as a function of the dopant concentration in the deposition plasma, but exhibit considerable scatter as a function of the solid-phase concentration. These results are discussed in the context of existing doping models.

Original languageEnglish
Pages (from-to)15-21
Number of pages7
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume53
Issue number1
DOIs
StatePublished - Jan 1986
Externally publishedYes

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