Tetra(silyl)methane, (H3Si)4C, a Volatile Carbosilane for the Chemical Vapor Deposition of Amorphous Silicon Carbide Thin Films

H. Schmidbaur, J. Zech

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Amorphous and polycrystalline silicon are the most important materials for modern photovoltaic devices. A method for the production of tetra(silyl)methane in high purity is presented. This allows its usage as a feedstock additive to silane gas used for the plasma-assisted chemical vapor deposition of amorphous silicon for wide-gap multijunction photovoltaic devices with carbon as a dopant. It has the advantage over other carbosilanes like H3SiCH3, (H3Si)2CH2, and (H3Si)3CH that it contains no robust CH bonds.

Original languageEnglish
Title of host publicationEfficient Methods for Preparing Silicon Compounds
PublisherElsevier Inc.
Pages13-19
Number of pages7
ISBN (Electronic)9780128035689
ISBN (Print)9780128035306
DOIs
StatePublished - 31 May 2016
Externally publishedYes

Keywords

  • Amorphous silicon
  • CVD
  • Carbosilanes
  • Polycrystalline silicon
  • Silane
  • Tetra(silyl)methane

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