Tetrasilylmethane, C(SiH3)4, the Si/C‐Inverse of Tetramethylsilane, Si(CH3)4

Rudolf Hager; Oliver Steigelmann; Gerhard Müller; Hubert Schmidbaur; Heather E. Robertson; David W.H. Rankin

doi:10.1002/anie.199002011

Tetrasilylmethane, C(SiH₃)₄, the Si/C‐Inverse of Tetramethylsilane, Si(CH₃)₄

Rudolf Hager
, Oliver Steigelmann
, Gerhard Müller
, Hubert Schmidbaur
, Heather E. Robertson
, David W.H. Rankin

Department of Chemistry

Technical University of Munich
University of Edinburgh

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)

Original language	English
Pages (from-to)	201-203
Number of pages	3
Journal	Angewandte Chemie International Edition in English
Volume	29
Issue number	2
DOIs	https://doi.org/10.1002/anie.199002011
State	Published - Feb 1990

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abstract = "Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)",

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T1 - Tetrasilylmethane, C(SiH3)4, the Si/C‐Inverse of Tetramethylsilane, Si(CH3)4

AU - Hager, Rudolf

AU - Steigelmann, Oliver

AU - Müller, Gerhard

AU - Schmidbaur, Hubert

AU - Robertson, Heather E.

AU - Rankin, David W.H.

PY - 1990/2

Y1 - 1990/2

N2 - Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)

AB - Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)

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DO - 10.1002/anie.199002011

M3 - Article

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IS - 2

ER -

Tetrasilylmethane, C(SiH₃)₄, the Si/C‐Inverse of Tetramethylsilane, Si(CH₃)₄

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