TY - JOUR
T1 - Tetrasilylmethane, C(SiH3)4, the Si/C‐Inverse of Tetramethylsilane, Si(CH3)4
AU - Hager, Rudolf
AU - Steigelmann, Oliver
AU - Müller, Gerhard
AU - Schmidbaur, Hubert
AU - Robertson, Heather E.
AU - Rankin, David W.H.
PY - 1990/2
Y1 - 1990/2
N2 - Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)
AB - Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)
UR - http://www.scopus.com/inward/record.url?scp=0025271738&partnerID=8YFLogxK
U2 - 10.1002/anie.199002011
DO - 10.1002/anie.199002011
M3 - Article
AN - SCOPUS:0025271738
SN - 0570-0833
VL - 29
SP - 201
EP - 203
JO - Angewandte Chemie International Edition in English
JF - Angewandte Chemie International Edition in English
IS - 2
ER -