Tetrasilylmethane, C(SiH3)4, the Si/C‐Inverse of Tetramethylsilane, Si(CH3)4

Rudolf Hager, Oliver Steigelmann, Gerhard Müller, Hubert Schmidbaur, Heather E. Robertson, David W.H. Rankin

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. (Formula Presented.)

Original languageEnglish
Pages (from-to)201-203
Number of pages3
JournalAngewandte Chemie International Edition in English
Volume29
Issue number2
DOIs
StatePublished - Feb 1990
Externally publishedYes

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