Testing semiconductor devices at extremely high operating temperatures

Peter Borthen; Gerhard Wachutka

doi:10.1016/j.microrel.2008.07.037

Testing semiconductor devices at extremely high operating temperatures

Peter Borthen, Gerhard Wachutka

Computation, Information and Technology

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very high-temperature conditions. The set-up consists of several modules comprising a vacuum system as basic unit and a number of alternative sample stages. Currently it enables measurements in the temperature range between room temperature and about 700 °C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on SiC devices.

Original language	English
Pages (from-to)	1440-1443
Number of pages	4
Journal	Microelectronics Reliability
Volume	48
Issue number	8-9
DOIs	https://doi.org/10.1016/j.microrel.2008.07.037
State	Published - Aug 2008

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10.1016/j.microrel.2008.07.037

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@article{ef1c62ae886842e587be1b019e528402,

title = "Testing semiconductor devices at extremely high operating temperatures",

abstract = "We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very high-temperature conditions. The set-up consists of several modules comprising a vacuum system as basic unit and a number of alternative sample stages. Currently it enables measurements in the temperature range between room temperature and about 700 °C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on SiC devices.",

author = "Peter Borthen and Gerhard Wachutka",

note = "Funding Information: This work was funded by the Dr. Johannes Heidenhain-Stiftung GmbH and the BMBF under the contract 01 M 3079E. We would like to thank the SiCED GmbH, Erlangen, Germany, for providing the SiC samples used in our tests.",

year = "2008",

month = aug,

doi = "10.1016/j.microrel.2008.07.037",

language = "English",

volume = "48",

pages = "1440--1443",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

number = "8-9",

}

TY - JOUR

T1 - Testing semiconductor devices at extremely high operating temperatures

AU - Borthen, Peter

AU - Wachutka, Gerhard

N1 - Funding Information: This work was funded by the Dr. Johannes Heidenhain-Stiftung GmbH and the BMBF under the contract 01 M 3079E. We would like to thank the SiCED GmbH, Erlangen, Germany, for providing the SiC samples used in our tests.

PY - 2008/8

Y1 - 2008/8

N2 - We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very high-temperature conditions. The set-up consists of several modules comprising a vacuum system as basic unit and a number of alternative sample stages. Currently it enables measurements in the temperature range between room temperature and about 700 °C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on SiC devices.

AB - We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very high-temperature conditions. The set-up consists of several modules comprising a vacuum system as basic unit and a number of alternative sample stages. Currently it enables measurements in the temperature range between room temperature and about 700 °C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on SiC devices.

UR - http://www.scopus.com/inward/record.url?scp=50249090070&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2008.07.037

DO - 10.1016/j.microrel.2008.07.037

M3 - Article

AN - SCOPUS:50249090070

SN - 0026-2714

VL - 48

SP - 1440

EP - 1443

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8-9

ER -

Testing semiconductor devices at extremely high operating temperatures

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