Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP

Christoph Deutsch, Alexander Benz, Hermann Detz, Pavel Klang, Michele Nobile, Aaron Maxwell Andrews, Werner Schrenk, Tillmann Kubis, Peter Vogl, Gottfried Strasser, Karl Unterrainer

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


We report the demonstration of a terahertz quantum cascade laser based on the In0.53 Ga0.47 As/ GaAs0.51 Sb0.49 type II material system. The combination of low effective electron masses and a moderate conduction band offset makes this material system highly suitable for such devices. The active region is a three-well phonon depopulation design and laser ridges have been processed in a double-metal waveguide configuration. The devices exhibit a threshold current density of 2 kA/ cm2, provide peak optical powers of 1.8 mW, and operate up to 102 K. Emission frequencies are in the range between 3.6 and 4.2 THz.

Original languageEnglish
Article number261110
JournalApplied Physics Letters
Issue number26
StatePublished - 27 Dec 2010


Dive into the research topics of 'Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP'. Together they form a unique fingerprint.

Cite this