Temperature driven memristive switching in Al/TiO2/Al devices

D. Reiser; A. Drost; D. Chryssikos; I. Eisele; M. Tornow

doi:10.1109/NANO47656.2020.9183631

Temperature driven memristive switching in Al/TiO₂/Al devices

D. Reiser, A. Drost, D. Chryssikos, I. Eisele, M. Tornow

Associate Professorship of Molekularelektronik

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching is reversible, i.e., it can be reset via application of an appropriate bias voltage sweep, typically up to 1 V. We have further investigated this temperature effect as function of an additionally applied bias and discuss our findings within a proposed atomistic model involving the preferential motion of oxygen vacancies into pre-exposed TiO2regions.

Original language	English
Title of host publication	NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
Publisher	IEEE Computer Society
Pages	342-347
Number of pages	6
ISBN (Electronic)	9781728182643
DOIs	https://doi.org/10.1109/NANO47656.2020.9183631
State	Published - Jul 2020
Event	20th IEEE International Conference on Nanotechnology, NANO 2020 - Virtual, Online, Canada Duration: 29 Jul 2020 → 31 Jul 2020

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2020-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	20th IEEE International Conference on Nanotechnology, NANO 2020
Country/Territory	Canada
City	Virtual, Online
Period	29/07/20 → 31/07/20

Keywords

Bipolar memristive switching
Memristor
Resistive random access memory (RRAM)
Sensor
Temperature dependence

Access to Document

10.1109/NANO47656.2020.9183631

Cite this

Reiser, D., Drost, A., Chryssikos, D., Eisele, I., & Tornow, M. (2020). Temperature driven memristive switching in Al/TiO₂/Al devices. In NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings (pp. 342-347). Article 9183631 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2020-July). IEEE Computer Society. https://doi.org/10.1109/NANO47656.2020.9183631

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title = "Temperature driven memristive switching in Al/TiO2/Al devices",

abstract = "Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching is reversible, i.e., it can be reset via application of an appropriate bias voltage sweep, typically up to 1 V. We have further investigated this temperature effect as function of an additionally applied bias and discuss our findings within a proposed atomistic model involving the preferential motion of oxygen vacancies into pre-exposed TiO2regions.",

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author = "D. Reiser and A. Drost and D. Chryssikos and I. Eisele and M. Tornow",

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Reiser, D, Drost, A, Chryssikos, D, Eisele, I & Tornow, M 2020, Temperature driven memristive switching in Al/TiO₂/Al devices. in NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings., 9183631, Proceedings of the IEEE Conference on Nanotechnology, vol. 2020-July, IEEE Computer Society, pp. 342-347, 20th IEEE International Conference on Nanotechnology, NANO 2020, Virtual, Online, Canada, 29/07/20. https://doi.org/10.1109/NANO47656.2020.9183631

Temperature driven memristive switching in Al/TiO₂/Al devices. / Reiser, D.; Drost, A.; Chryssikos, D. et al.
NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings. IEEE Computer Society, 2020. p. 342-347 9183631 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2020-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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