Temperature-dependent study of 6H-SiC pin-diode reverse characteristics

M. Lades; A. Schenk; U. Krumbein; G. Wachutka; W. Fichtner

doi:10.1109/SISPAD.1996.865271

Temperature-dependent study of 6H-SiC pin-diode reverse characteristics

M. Lades
, A. Schenk
, U. Krumbein
, G. Wachutka
, W. Fichtner

Computation, Information and Technology

Technical University of Munich
ETH Zurich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Silicon carbide is a promising material for special semiconductor applications, such as high-power and high-temperature devices. To date, much effort has been devoted to improving the process and device technology. With the progress in this field, the need for accurate modeling of device characteristics arises. This implies the formulation of proper physical models and their validation. We report on investigations of the reverse characteristics of a 6H-SiC pin diode using the multi-dimensional device simulator DESSIS _-ISE discussing the contributions of different physical mechanisms to the blocking behavior and their temperature dependence in the range of 300-623 K.

Original language	English
Title of host publication	1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	55-56
Number of pages	2
ISBN (Electronic)	0780327454
DOIs	https://doi.org/10.1109/SISPAD.1996.865271
State	Published - 1996
Event	1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 - Tokyo, Japan Duration: 2 Sep 1996 → 4 Sep 1996

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
Country/Territory	Japan
City	Tokyo
Period	2/09/96 → 4/09/96

Access to Document

10.1109/SISPAD.1996.865271

Cite this

Lades, M., Schenk, A., Krumbein, U., Wachutka, G., & Fichtner, W. (1996). Temperature-dependent study of 6H-SiC pin-diode reverse characteristics. In 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 (pp. 55-56). Article 865271 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.1996.865271

Lades, M. ; Schenk, A. ; Krumbein, U. et al. / Temperature-dependent study of 6H-SiC pin-diode reverse characteristics. 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996. Institute of Electrical and Electronics Engineers Inc., 1996. pp. 55-56 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{5b0c6a39ae464612bde465884b9d7ff6,

title = "Temperature-dependent study of 6H-SiC pin-diode reverse characteristics",

abstract = " Silicon carbide is a promising material for special semiconductor applications, such as high-power and high-temperature devices. To date, much effort has been devoted to improving the process and device technology. With the progress in this field, the need for accurate modeling of device characteristics arises. This implies the formulation of proper physical models and their validation. We report on investigations of the reverse characteristics of a 6H-SiC pin diode using the multi-dimensional device simulator DESSIS -ISE discussing the contributions of different physical mechanisms to the blocking behavior and their temperature dependence in the range of 300-623 K.",

author = "M. Lades and A. Schenk and U. Krumbein and G. Wachutka and W. Fichtner",

note = "Publisher Copyright: {\textcopyright} 1996 IEEE.; 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 ; Conference date: 02-09-1996 Through 04-09-1996",

year = "1996",

doi = "10.1109/SISPAD.1996.865271",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "55--56",

booktitle = "1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996",

}

Lades, M, Schenk, A, Krumbein, U, Wachutka, G & Fichtner, W 1996, Temperature-dependent study of 6H-SiC pin-diode reverse characteristics. in 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996., 865271, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 55-56, 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996, Tokyo, Japan, 2/09/96. https://doi.org/10.1109/SISPAD.1996.865271

Temperature-dependent study of 6H-SiC pin-diode reverse characteristics. / Lades, M.; Schenk, A.; Krumbein, U. et al.
1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996. Institute of Electrical and Electronics Engineers Inc., 1996. p. 55-56 865271 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature-dependent study of 6H-SiC pin-diode reverse characteristics

AU - Lades, M.

AU - Schenk, A.

AU - Krumbein, U.

AU - Wachutka, G.

AU - Fichtner, W.

PY - 1996

Y1 - 1996

N2 - Silicon carbide is a promising material for special semiconductor applications, such as high-power and high-temperature devices. To date, much effort has been devoted to improving the process and device technology. With the progress in this field, the need for accurate modeling of device characteristics arises. This implies the formulation of proper physical models and their validation. We report on investigations of the reverse characteristics of a 6H-SiC pin diode using the multi-dimensional device simulator DESSIS -ISE discussing the contributions of different physical mechanisms to the blocking behavior and their temperature dependence in the range of 300-623 K.

AB - Silicon carbide is a promising material for special semiconductor applications, such as high-power and high-temperature devices. To date, much effort has been devoted to improving the process and device technology. With the progress in this field, the need for accurate modeling of device characteristics arises. This implies the formulation of proper physical models and their validation. We report on investigations of the reverse characteristics of a 6H-SiC pin diode using the multi-dimensional device simulator DESSIS -ISE discussing the contributions of different physical mechanisms to the blocking behavior and their temperature dependence in the range of 300-623 K.

UR - https://www.scopus.com/pages/publications/17744363505

U2 - 10.1109/SISPAD.1996.865271

DO - 10.1109/SISPAD.1996.865271

M3 - Conference contribution

AN - SCOPUS:17744363505

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 55

EP - 56

BT - 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996

Y2 - 2 September 1996 through 4 September 1996

ER -

Lades M, Schenk A, Krumbein U, Wachutka G, Fichtner W. Temperature-dependent study of 6H-SiC pin-diode reverse characteristics. In 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996. Institute of Electrical and Electronics Engineers Inc. 1996. p. 55-56. 865271. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.1996.865271

Temperature-dependent study of 6H-SiC pin-diode reverse characteristics

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