Temperature dependence of luminescence in porous silicon and related materials

M. Rosenbauer, M. Stutzmann, H. D. Fuchs, S. Finkbeiner, J. Weber

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17 Scopus citations

Abstract

We have investigated the temperature dependence of the visible luminescence of porous silicon and other Si-based luminescent materials (as-prepared and annealed siloxene, amorphous Si:O:H alloys) at temperatures between 10 and 359 K. In all samples, the decrease of the luminescence intensity, I(T), at temperatures > 100 K can be described by the relation I0/I(T) = 1 + exp(T/T0). At temperatures < 100 K, some of the strongly luminescent samples show a decrease of the luminescence intensity with decreasing temperature. We have found this decrease to be related to a "fine structure" in the luminescence spectra of yet unknown origin.

Original languageEnglish
Pages (from-to)153-157
Number of pages5
JournalJournal of Luminescence
Volume57
Issue number1-6
DOIs
StatePublished - 1993
Externally publishedYes

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