Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon

M. Stutzmann; C. P. Herrero

doi:10.1063/1.98641

Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon

M. Stutzmann, C. P. Herrero

Max Planck Institute for Solid State Research

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13 Scopus citations

Abstract

Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5-450 K and for H(D) concentrations between 1×10¹⁹ and 1×10²⁰ cm^-3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.

Original language	English
Pages (from-to)	1413-1415
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	18
DOIs	https://doi.org/10.1063/1.98641
State	Published - 1987
Externally published	Yes

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title = "Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon",

abstract = "Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5-450 K and for H(D) concentrations between 1×1019 and 1×1020 cm-3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.",

author = "M. Stutzmann and Herrero, {C. P.}",

year = "1987",

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T1 - Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon

AU - Stutzmann, M.

AU - Herrero, C. P.

PY - 1987

Y1 - 1987

N2 - Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5-450 K and for H(D) concentrations between 1×1019 and 1×1020 cm-3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.

AB - Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5-450 K and for H(D) concentrations between 1×1019 and 1×1020 cm-3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.

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U2 - 10.1063/1.98641

DO - 10.1063/1.98641

M3 - Article

AN - SCOPUS:0642341839

SN - 0003-6951

VL - 51

SP - 1413

EP - 1415

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon

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