Temperature Dependence and Temperature-Aware Sensing in Ferroelectric FET

Aniket Gupta, Kai Ni, Om Prakash, X. Sharon Hu, Hussam Amrouch

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

30 Scopus citations

Abstract

The temperature dependence of Ferroelectric FET (FeFET) at the 14nm technology node has been studied thoroughly through well-calibrated TCAD modeling for 3D FinFET devices. We demonstrate, for the first time, that: 1) the degradation of FeFET (i.e., reduction in sensing current during reading) with temperature increase comes mostly from the ferroelectric degradation (i.e., reductions in the coercive field and polarization), while marginally from the degradation in the underlying FinFET (i.e. changes in electrostatics and carrier transport properties); 2) the drain current reduction caused by the ferroelectric degradation can be partially compensated with the current boost induced by the degradation in electrostatics and carrier transport properties. Therefore, the read voltage of FeFET based nonvolatile memory (NVM) can be carefully selected to mitigate deleterious effects of temperature variation during runtime.

Original languageEnglish
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
DOIs
StatePublished - Apr 2020
Externally publishedYes
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: 28 Apr 202030 May 2020

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2020-April
ISSN (Print)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
Country/TerritoryUnited States
CityVirtual, Online
Period28/04/2030/05/20

Keywords

  • Emerging Technology
  • FeFET
  • Ferroelectric
  • Nonvolatile Memory
  • NVM
  • Reliability
  • TCAD
  • Temperature

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