Tcad simulations combined with free carrier absorption experiments revealing the physical nature of hydrogen-related donors in igbts

Andreas Korzenietz, Frank Hille, Franz Josef Niedernostheide, Christian Sandow, Gerhard Wachutka, Gabriele Schrag

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.

Original languageEnglish
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109404
DOIs
StatePublished - Sep 2019
Event24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
Duration: 4 Sep 20196 Sep 2019

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Country/TerritoryItaly
CityUdine
Period4/09/196/09/19

Keywords

  • Carrier Lifetime
  • Carrier Mobility
  • Free Carrier Absorption Measurements
  • IGBT
  • Proton Induced Donors

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