TY - GEN
T1 - Tcad simulations combined with free carrier absorption experiments revealing the physical nature of hydrogen-related donors in igbts
AU - Korzenietz, Andreas
AU - Hille, Frank
AU - Niedernostheide, Franz Josef
AU - Sandow, Christian
AU - Wachutka, Gerhard
AU - Schrag, Gabriele
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.
AB - Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.
KW - Carrier Lifetime
KW - Carrier Mobility
KW - Free Carrier Absorption Measurements
KW - IGBT
KW - Proton Induced Donors
UR - http://www.scopus.com/inward/record.url?scp=85074350347&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2019.8870353
DO - 10.1109/SISPAD.2019.8870353
M3 - Conference contribution
AN - SCOPUS:85074350347
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
BT - Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
A2 - Driussi, Francesco
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Y2 - 4 September 2019 through 6 September 2019
ER -